SEMICONDUCTOR PHYSICS LABORATORY
The principal area of research in the Semiconductor physics Laboratory is the study of defects in crystalline semiconductors, although characterization of semi conductivity in new high temperature superconductors has recently been added as a secondary line of research in this laboratory. The crystalline semiconductors under study in the laboratory include both elemental semiconductors such as Si and III-V compounds such as GaP, GaAsP, AlGaAs and InP. The experimental techniques used for characterization of defects include Junction space-charge techniques such as Deep Level Transient Spectroscopy (DLTS), Optical-DLTS and Photo capacitance while Fourier Transform Infrared (FTIR) spectroscopy has recently been added for optical absorption studies. A conventional photoluminescence spectroscopy facility has also been developed in the laboratory. A number of deep-level systems have been studied in detail and results reported in international journals and conferences.
FUTURE INTERESTS
Fourier transform photoluminescence (FT-PL) spectroscopy of semiconductors. New techniques of semiconductor material preparation and characterization. Electron paramagnetic resonance (EPR) investigations of defects in semiconductors. MOCVD and MBE growth of semi- conductors.
PUBLICATION

     SEMICONDUCTOR NEWS
April -June 2008
Vol. 17 No.2, 51-116
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